MOSFETs | FQP17N40

功率 MOSFET，N 沟道，QFET®，400 V，16 A，270 mΩ，TO-220

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属工艺生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • 不间断电源
  • 其他工业
  • 16A，400V，RDS(on) = 270mΩ（最大值）（VGS = 10 V 且 ID = 8A 时）
  • 低栅极电荷（典型值 45nC)
  • 低 Crss（典型值 30pF)
  • 100% 经过雪崩击穿测试

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQP17N40

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

400

270

N-Channel

Single

±30

5

16

170

-

-

-

45

1800

$1.2528

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