MOSFETs | FQP45N15V2

功率 MOSFET，N 沟道，QFET®，150 V，45 A，40 mΩ，TO-220

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概览

此 N 沟道增强型功率 MOSFET 是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • 其他工业
  • 45A, 150V, RDS(on) = 40mΩ（最大值）@VGS = 10 V, ID = 22.5A栅极电荷低（典型值：72nC)
  • 低 Crss（典型值135pF)
  • 100% 经过雪崩击穿测试
  • 175°C最大结温额定值"
  • 175°C maximum junction temperature rating

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQP45N15V2

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

Y

150

40

N-Channel

Single

±25

4

45

220

-

-

-

72

2330

$1.0982

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