High Voltage MOSFETs | FQT1N60CTF-WS

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

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This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  • Computiong
  • Consumer
  • Industrial
  • Notebook / Desktop computer
  • LED Lighting / Ballast
  • Adapter
  • 0.2A, 600V, RDS(on) = 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 3.5pF)
  • 100% avalanche tested
  • RoHS compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQT1N60CTF-WS

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

250

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

High Voltage

Standard

0

Single

0

600

11500

±30

4

0.2

2.1

-

-

-

4.8

130

2.7

530

19

3.5

$0.2567

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