功率 MOSFET,N 沟道,SUPREMOS®,FAST,600 V,16 A,199 mΩ,TO-3P
Obsolete
SupreMOS® MOSFET 是下一代高压超结 (SJ) 技术,采用深沟槽填充工艺,使其与传统的 SJ MOSFET 区分开来。这种先进技术和精确的工艺控制提供了最低的 Rsp 导通电阻、出色的开关性能和坚固性。SupreMOS MOSFET 适用于高频率开关电源转换器应用,如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
TO-3P-3L
NA
0
TUBE
450
N
N-Channel
PowerTrench® T1
TO-3P-3
High Voltage
Standard
0
Single
0
600
199
±30
4
16
134.4
-
-
-
40.2
1630
6.7
-
70
5
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: FCA16N60N
Equivalent to wafer fab process: 7S
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
7S
0
591889532
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)