功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,20 A,190 mΩ,TO-3P

Lifetime

概览

SuperFET® MOSFET 是安森美半导体的第一代高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的出色性能。此技术专用于最大程度降低导通损耗,提供出色的开关性能、dv/dt 速率和更高的雪崩能量。因此,SuperFET MOSFET 非常适用于开关电源应用,如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • 650V @ TJ = 150°C
  • 典型值 RDS(on) = 150 mΩ
  • 超低栅极电荷(典型值 Qg = 75 nC )
  • 低有效输出电容(典型值 Coss(eff.) = 165 pF )
  • 100% 经过雪崩击穿测试

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Lifetime

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3PN

High Voltage

Standard

0

Single

0

600

190

5

5

20

208

-

-

-

75

2370

36

-

1280

95

$3.1955

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