High Voltage MOSFETs | FCA36N60NF

功率 MOSFET，N 沟道，SUPREMOS®，FRFET®， 600 V，34.9 A，95 mΩ，TO-3P

Obsolete

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概览

SupreMOS® MOSFET 是下一代高压超结 (SJ) 技术，它采用深沟槽填充工艺，使其与传统的 SJ MOSFET 区分开来。这种先进技术和精确的工艺控制提供了最低的 Rsp 导通电阻、卓越的开关性能和坚固性。SupreMOS MOSFET 适用于高频率开关电源转换器应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。SupreMOS FRFET® MOSFET 优化的体二极管逆向恢复性能可以消除附加组件，提高系统可靠性。

  • This product is general usage and suitable for many different applications.
  • Solar Inverter
  • AC-DC Power Supply
  • Power Factor Correction
  • Industrial Power Application

  • RDS(on) = 80mΩ （典型值）@ VGS = 10V, ID = 18A
  • 超低栅极电荷（典型值Qg = 86nC )
  • 低有效输出电容（典型值Coss.eff = 338pF )
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

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Reference Price

FCA36N60NF

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3P-3

High Voltage

Standard

0

Single

0

600

95

±30

5

34.9

312

-

-

-

86

3191

36

1300

145

5

Price N/A

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可靠性数据

Die Related Summary Data

Device: FCA36N60NF

Equivalent to wafer fab process: 7S

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

7S

0

591889532

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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