High Voltage MOSFETs | FCB110N65F

功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，D2-PAK

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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。SuperFET® II FRFET® MOSFET 具有更快速和更耐用的本征体二极管性能和快速开关，尤其在谐振开关应用中可实现更佳可靠性和高能效。SuperFET® II FRFET® 非常适用于开关电源应用，如服务器/电信电源、太阳能逆变器、FPD TV 电源、计算电源、照明和工业电源应用。

  • 700 V @TJ= 150°C
  • 典型值RDS(on)=96 mΩ（典型值）
  • 超低栅极电荷（典型值Qg=98 nC）
  • 低有效输出电容（典型值Coss(eff.)= 464 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCB110N65F

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

High Voltage

Standard

0

Single

0

650

110

DC: ±20, AC: ±30

5

35

357

-

-

-

98

3680

43

670

110

0.65

$2.8937

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可靠性数据

Die Related Summary Data

Device: FCB110N65F

Equivalent to wafer fab process: 3A

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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