600 V、20 A、173 mΩ、D2PAK
N 沟道 SuperFET™

Obsolete

概览

SuperFETTM是飞兆专有的新一代高压 MOSFET 系列产品,它利用了先进的电荷平衡机制,实现出色的低导通电阻及低栅极电荷性能。这一先进技术是专为最大程度地降低导通损耗,提供卓越开关性能,以及承受高雪崩和极端 dv/dt 比率而定制的。因此,SuperFET 特别适合各种车用DC/DC 功率转换。

  • Various Automotive DC/DC Power Conversion

  • 典型值 rDS(on)=173 mΩ,条件是 VGS=10V、ID=20A
  • 典型值 Qg(tot)=72 nC,条件是 VGS=10V, ID=20A
  • UIS 能力
  • 符合 RoHS 标准
  • 符合 AEC Q101

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCB20N60-F085

Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

N-Channel

PowerTrench® T1

NA

High Voltage

Standard

0

Single

0

600

198

±30

5

20

341

-

-

-

72

2710

31

10000

1350

68

Price N/A

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