High Voltage MOSFETs | FCB20N60F_F085

N 沟道 MOSFET 600V，20A，190mΩ，

Obsolete

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概览

SuperFETTM 是新一代高压专属 MOSFET 系列产品，利用先进的电荷平衡机制实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此先进技术专用于最大程度降低导电损耗，提供卓越的开关性能，并且可以承受极端 dv/dt 速率，实现更高的雪崩能量。因此，SuperFET 非常适用于在开关模式运行的各种 AC/DC 电源转换中实现系统小型化和更高效率。

  • Automotive On Board Charger
  • Automotive DC/DC converter for HEV

  • 典型值 rDS(on) = 171 mΩ（VGS= 10 V、ID = 20 A
    ）
  • 典型Qg(tot)=78nC（VGS=10V、ID=20A
    ）
  • UIS 能力
  • 符合 RoHS 标准
  • 符合 AEC Q101 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCB20N60F-F085

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

N-Channel

PowerTrench® T1

NA

High Voltage

Standard

0

Single

0

600

190

±30

5

20

405

-

-

-

78

2305

41.5

1285

1310

105

Price N/A

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可靠性数据

Die Related Summary Data

Device: FCB20N60F-F085

Equivalent to wafer fab process: 3A

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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