功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,12 A,260 mΩ,D2PAK

概览

SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的卓越性能。此先进技术专用于最大程度降低导电损耗,提供卓越的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更简单的设计实施。

  • Computing
  • Consumer
  • Industrial

  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Automation
  • Adapter

  • 700 V @ TJ = 150 °C
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
  • Ultra Low Gate Charge (Typ. Qg= 24 nC)
  • Internal Gate resistance: 8.7ohm
  • Optimized Capacitance
  • Typ. RDS(on) = 222 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant
  • Wave soldering guarantee

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCB260N65S3

Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

High Voltage

Standard

0

Single

0

650

260

±30

4.5

12

90

-

-

-

24

1010

9.7

3400

25

-

$1.3816

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