High Voltage MOSFETs | FCB36N60N

功率 MOSFET，N 沟道，SUPREMOS®, FAST，600V，25A，125mΩ，D2PAK

已停产

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概览

SupreMOS® MOSFET 是下一代高压超结 (SJ) 技术，它采用深沟槽填充工艺，使其与传统的 SJ MOSFET 区分开来。这种先进技术和精确的工艺控制提供了最低的 Rsp 导通电阻、卓越的开关性能和坚固性。SupreMOS MOSFET 适用于高频率开关电源转换器应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 81mΩ （典型值）@ VGS = 10V, ID = 18A
  • 超低栅极电荷（典型值Qg = 86nC )
  • 低有效输出电容（典型值Coss.eff = 361pF )
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FCB36N60NTM

联系销售

已停产

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

No

N-Channel

PowerTrench® T1

D2PAK-3

High Voltage

Standard

0

Single

0

600

125

±30

4

36

312

-

-

-

86

3595

26.4

10000

149

4

Price N/A

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可靠性数据

Die Related Summary Data

Device: FCB36N60NTM

Equivalent to wafer fab process: 7S

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

7S

0

675347820

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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