High Voltage MOSFETs | FCD5N60_F085

N 沟道，SuperFET®，600 V，4.6 A，0.86 Ω

Obsolete

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概览

SuperFET® 是安森美半导体专属的新一代高电压 MOSFET，采用先进的电荷平衡机制，实现了出色的低导通电阻和更低门极电荷性能。此先进工艺专用于最大程度降低导电损耗，提供卓越的开关性能和更高的雪崩能量，并且可以承受极端 dv/dt 速率。因此，SuperFET® 适用于各种汽车 DC-DC 功率转换。

  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV

  • 600 V、4.6 A, 典型值Rds(on)= 860 mΩ（VGS= 10 V
    ）
  • 超低栅极电荷（典型值Qg = 16 nC）
  • UIS 能力
  • 符合 RoHS 标准
  • 符合 AEC Q101 标准

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MSL Temp (°C)

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD5N60-F085

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

600

1100

±30

5

4.6

54

-

-

-

16

570

7.6

1700

280

20

Price N/A

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可靠性数据

Die Related Summary Data

Device: FCD5N60-F085

Equivalent to wafer fab process: 3A

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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