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N 沟道,SuperFET®,600 V,4.6 A,0.86 Ω
Obsolete
SuperFET® 是安森美半导体专属的新一代高电压 MOSFET,采用先进的电荷平衡机制,实现了出色的低导通电阻和更低门极电荷性能。此先进工艺专用于最大程度降低导电损耗,提供卓越的开关性能和更高的雪崩能量,并且可以承受极端 dv/dt 速率。因此,SuperFET® 适用于各种汽车 DC-DC 功率转换。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
DPAK-3 / TO-252-3
1
260
REEL
2500
N
N-Channel
PowerTrench® T1
TO-252-3
High Voltage
Standard
0
Single
0
600
1100
±30
5
4.6
54
-
-
-
16
570
7.6
1700
280
20
Price N/A
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可靠性数据
Die Related Summary Data
Device: FCD5N60-F085
Equivalent to wafer fab process: 3A
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3A
26
4688824297
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)