N 沟道,SuperFET®,600 V,4.6 A,0.86 Ω

Obsolete

概览

SuperFET® 是安森美半导体专属的新一代高电压 MOSFET,采用先进的电荷平衡机制,实现了出色的低导通电阻和更低门极电荷性能。此先进工艺专用于最大程度降低导电损耗,提供卓越的开关性能和更高的雪崩能量,并且可以承受极端 dv/dt 速率。因此,SuperFET® 适用于各种汽车 DC-DC 功率转换。

  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV

  • 600 V、4.6 A, 典型值Rds(on)= 860 mΩ(VGS= 10 V
  • 超低栅极电荷(典型值Qg = 16 nC)
  • UIS 能力
  • 符合 RoHS 标准
  • 符合 AEC Q101 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD5N60-F085

Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

600

1100

±30

5

4.6

54

-

-

-

16

570

7.6

1700

280

20

Price N/A

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