功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,6 A,600 mΩ,DPAK

概览

SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列,利用电荷平衡技术实现出色的低导通电阻,以及更低门极电荷方面的出色性能。此先进技术专用于最大程度降低导通损耗,提供出色的开关性能,并且可以承受极端 dv/dt 速率。因此,SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题,实现更轻松的设计实施。

  • Computing
  • Consumer
  • Industrial

  • Notebook / Desktop computer
  • Game Console
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
  • Telecom / Server

  • 700 V @ TJ= 150 oC
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Optimized Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant
  • Typ. RDS(on) = 493 mΩ
  • Internal Gate Resistance: 0.9 Ω

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD600N65S3R0

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

High Voltage

Standard

0

Single

0

650

600

30

4.5

6

54

-

-

-

11

465

4.9

1600

10

-

$0.6717

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