High Voltage MOSFETs | FCD9N60NTM

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，9 A，385 mΩ，DPAK

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概览

SupreMOS® MOSFET 是下一代高压超结 (SJ) 技术，采用深沟槽填充工艺，使其与传统的 SJ MOSFET 区分开来。这种先进技术和精确的工艺控制提供了最低的 Rsp 导通电阻、出色的开关性能和坚固性。SupreMOS MOSFET 适用于高频率开关电源转换器应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.

  • RDS(on) = 330mΩ （典型值） @ VGS = 10V, ID = 4.5A
  • 超低栅极电荷（典型值 Qg = 17.8nC )
  • 低有效输出电容（典型值 Coss.eff = 122pF ）
  • 100%经过雪崩测试
  • 符合RoHS标准

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Case Outline

MSL Type

MSL Temp (°C)

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Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD9N60NTM

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

600

385

±30

5

9

92.6

-

-

-

17.8

735

7.6

5040

40

3.5

Price N/A

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可靠性数据

Die Related Summary Data

Device: FCD9N60NTM

Equivalent to wafer fab process: 7S

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

7S

0

591889532

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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