High Voltage MOSFETs | FQPF5N60C

功率 MOSFET，N 沟道，QFET®，600 V，4.5 A，2.5 Ω，TO-220F

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概览

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用 Fairchild 的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关模式电源、功率系数校正、基于半桥的电子灯镇流器。

  • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10V
  • Low gate charge (typical 15 nC)
  • Low Crss (typical 6.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF5N60C

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CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

600

2500

±30

4

4.5

33

-

-

-

15

515

6.6

2200

55

6.5

Price N/A

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可靠性数据

Die Related Summary Data

Device: FQPF5N60C

Equivalent to wafer fab process: CE

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

CE

15

2535417142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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