High Voltage MOSFETs | NTHL040N65S3F

功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，65 A，40 mΩ，TO-247

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  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 158 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 32 mΩ

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MSL Temp (°C)

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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NTHL040N65S3F

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CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

650

40

30

5

65

446

-

-

-

158

5940

60

737

140

-

$8.6331

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可靠性数据

Die Related Summary Data

Device: NTHL040N65S3F

Equivalent to wafer fab process: 3A

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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