High Voltage MOSFETs | NVHL040N65S3F

Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247

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SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的出色性能。此先进技术专用于最大程度降低导通损耗，提供出色的开关性能，并且可以承受极端 dv/dt 速率。因此，SUPERFET III MOSFET 适用于各种电源系统，实现系统小型化和更高效能。SUPERFET III FRFET MOSFET 优化的体二极管反向恢复性能使其无需额外部件，并可提高系统可靠性。

  • HV DC/DC converter
  • On Board Charger

  • On Board Charger
  • DC/DC Converter

  • Best in Class body diode
  • Internal Rg
  • Lower RDS(on) / Same Packages
  • Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS
  • Internal Zener / 650V BVdss

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MSL Temp (°C)

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Container Qty.

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Package Name

Type

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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NVHL040N65S3F

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CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

650

40

±30

5

65

446

~NA~

~NA~

~NA~

153

5875

~NA~

840

140

241

$7.5109

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可靠性数据

Die Related Summary Data

Device: NVHL040N65S3F

Equivalent to wafer fab process: HVFET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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