Low/Medium Voltage MOSFETs | FDD4141

P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ

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概览

此 P 沟道 MOSFET 是使用 PowerTrench® 专属技术生产的，可提供低 RDS(on) 和优化的 BVdss 能力，为应用带来卓越性能优势，还能提供优化的开关性能，降低转换器/反相器应用中的功率耗散损耗。

  • This product is general usage and suitable for many different applications.

  • VGS = -10V，ID = -12.7A时，最大RDS(on) = 12.3 mΩ
  • VGS = -4.5V，ID = -10.4A时，最大RDS(on) = 18.0 mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD4141

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-40

12.3

±20

-3

-50

69

-

18

-

19

2058

8

26

360

210

$0.3583

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可靠性数据

Die Related Summary Data

Device: FDD4141

Equivalent to wafer fab process: R2

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

R2

0

1067433832

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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