P 沟道,Power Trench® MOSFET,-20V,-75A,4.9mΩ

Last Shipments

概览

此 P 沟道 MOSFET 是使用安森美半导体先进的 PowerTrench® 工艺生产的,针对 rDS(on)、开关性能和坚固性进行了优化。

  • Load Switch
  • Battery Management
  • Power Management
  • Reverse Polarity Protection

  • Max rDS(on) = 4.9 m at VGS = −4.5 V, ID = −18 A
  • Max rDS(on) = 16.4 m at VGS = −1.8 V, ID = −9 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely UsedSurface Mount Package
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC4D9P20X8

Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

-20

-

±12

-1.6

-75

40

6.5

4.9

78

-

7535

24

22

1100

1040

Price N/A

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