N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 263A, 1.4mΩ

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This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • AC-DC Merchant Power Supply

  • Synchronous Rectification (SR) in DC-DC and AC-DC
  • Primary Switch in Isolated DC-DC Converter
  • Motor Drives
  • ORing FET Load Switching

  • Low RDS(on)
  • Advanced Dual-Sided Cooled Packaging

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMFSCH1D4N08XTWG

Product Preview

CAD Model

Pb

A

H

P

DFN8 4.90x5.80x0.90, 1.27P

1

260

REEL

3000

F

N-Channel

PowerTrench® T10

Power 56 Dual Cool

Low-Medium Voltage

Standard

~NA~

Single

~NA~

80

1.4

20

3.6

263

208

~NA~

~NA~

~NA~

89

6203

~NA~

249

1825

28

Price N/A

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