Low/Medium Voltage MOSFETs | FDB024N06

N 沟道，PowerTrench® MOSFET，60V，265A，2.4mΩ

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概览

此 N 沟道 MOSFET 是使用 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • AC-DC商用电源
  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 其他数据处理

  • RDS(on) = 1.8mΩ （典型值）@ VGS = 10V，ID = 75A
  • 快速开关速度
  • 低栅极电荷
  • 高性能沟道技术可实现极低的RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB024N06

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

60

2.4

20

4.5

265

395

-

-

-

174

11190

50

152

1610

750

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDB024N06

Equivalent to wafer fab process: T2

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T2

0

1290840276

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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