Low/Medium Voltage MOSFETs | FDB024N08BL7

N 沟道，PowerTrench® MOSFET，80V，229A，2.4mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • AC-DC商用电源
  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 电动自行车
  • 其他数据处理

  • RDS(on) = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A
  • 低 FOM RDS(on) *QG
  • 低反向恢复电荷，Qrr
  • 反向恢复软体二极管
  • 使能高效同步整流
  • 快速开关速度
  • 符合 RoHS 标准
  • 符合 JEDEC 标准 JESD22-A113F 和IPC/JEDEC J-STD-020D.1

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB024N08BL7

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CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

Y

N-Channel

PowerTrench® T6

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

80

2.4

±20

4.5

229

246

-

-

-

137

10170

28

112

1670

35

$1.967

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可靠性数据

Die Related Summary Data

Device: FDB024N08BL7

Equivalent to wafer fab process: RM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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