Low/Medium Voltage MOSFETs | FDB86102LZ

N 沟道 PowerTrench® MOSFET，100V，30A，24mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻和开关损耗。增加了 G-S 齐纳以提高 ESD 电压水平。

  • AC-DC商用电源

  • VGS = 10 V且ID = 8.3A时，最大rDS(on) = 24 mΩ
  • VGS = 4.5 V且ID = 6.8 A时，最大rDS(on) = 35 mΩ
  • HBM ESD保护等级> 6 KV典型值（注4）
  • 与其他沟道技术相比，具有极低的Qg和Qgd
  • 快速开关速度
  • 100%经过UIL测试
  • 符合RoHS标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB86102LZ

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Logic

0

Single

0

100

24

±20

3

30

3.1

-

35

-

7.6

959

2.5

40

181

9

$0.6936

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可靠性数据

Die Related Summary Data

Device: FDB86102LZ

Equivalent to wafer fab process: T7

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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