Low/Medium Voltage MOSFETs | FDFM2N111

20V集成式P沟道PowerTrench® MOSFET和肖特基二极管

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数据表

购买

概览

FDFM2N111将飞兆半导体的 PowerTrench MOSFET 技术所带来的卓越性能与正向压降非常低的肖特基势垒整流器融合在 MicroFET 封装中。
该器件专门设计为标准降压转换器的单封装解决方案。 它具有带极低通态电阻的快速开关、低栅极电荷 MOSFET。

  • This product is general usage and suitable for many different applications.
  • 4 A，20 V
  • RDS(ON) = 100 mΩ @ VGS = 4.5 V
  • RDS(ON) = 150 mΩ @ VGS = 2.5 V
  • 小型 - 0.8 毫米最大值 - 采用新封装 MicroFET 3×3 毫米

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与FDFM2N111相关的产品服务、工具和其他资源

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可靠性数据

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDFM2N111

联系销售

已停产

CAD Model

Pb

A

H

P

WDFN-6

511DT

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

WDFN-6

Low-Medium Voltage

Logic

0

with Schottky Diode

0

20

-

12

1.5

4

1.7

150

100

-

2.7

273

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDFM2N111

Equivalent to wafer fab process: S1,TT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

S1,TT

0

153640249

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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