Low/Medium Voltage MOSFETs | FDMA7628

单 N 沟道 1.5V 指定 PowerTrench® MOSFET 20V，9.4A，14.5mΩ

Obsolete

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概览

此单 N 沟道 MOSFET 使用安森美半导体先进的 Power Trench® 工艺设计，可基于特制的 MicroFET 引线框架优化 rDS(ON) @ VGS = 1.5 V。

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  • VGS = 4.5 V，ID = 9.4 A时，最大rDS(on) = 14.5mΩ
  • VGS = 2.5 V，ID = 8.3 A时，最大rDS(on) = 18.2mΩ
  • VGS = 1.8 V，ID = 7.3 A时，最大rDS(on) = 23.3mΩ
  • VGS = 1.5 V，ID = 6.2 A时，最大rDS(on) = 32.3mΩ
  • 薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA7628

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

511DB

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1

9.4

1.9

18.2

14.5

4.4

6.2

1260

-

-

-

-

Price N/A

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