25V N沟道PowerTrench® MOSFET
此 N 沟道 MOSFET 使用同步或传统的开关 PWM 控制器,专为提高 DC-DC 转换器的整体效率并最大限度降低其开关节点振铃噪声而设计。 已经优化实现低栅极电荷、低 rDS(on)、快速开关速度和体二极管反向恢复性能。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
参考价格
已停产
Pb
A
H
P
PQFN-8
1
260
REEL
3000
No
N-Channel
PowerTrench® T1
Power 33 Dual Cool
Low-Medium Voltage
Logic
0
Single
0
25
5
12
1.8
40
41
-
5.7
19.4
12
1695
-
-
-
-
Price N/A
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可靠性数据
Die Related Summary Data
Device: FDMC8588DC
Equivalent to wafer fab process: U5
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
U5
0
54180784
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)