Low/Medium Voltage MOSFETs | FDMC86324

N 沟道，Power Trench® MOSFET，80V，20A，23mΩ

量产中

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • ￭ VGS = 23 V，ID = 7 A时，最大rDS(on)
    = 10 mΩ
  • VGS = 6 V，ID = 4 A时，最大rDS(on) = 37mΩ
  • 薄型 - 最大1 mm，采用Power 33封装
  • 100%经过UIL测试
  • 符合RoHS标准

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与FDMC86324相关的产品服务、工具和其他资源

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDMC86324

联系销售

量产中

CAD Model

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

Yes

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

80

23

±20

4

20

41

-

-

-

13

725

3.6

40

175

15

$0.6081

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可靠性数据

Die Related Summary Data

Device: FDMC86324

Equivalent to wafer fab process: T7

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

6716497626

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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