Low/Medium Voltage MOSFETs | FDMC8878

N 沟道，PowerTrench® MOSFET，30V，16.5A，14mΩ

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概览

此 N 沟道 MOSFET 是先进的 Power Trench 工艺的坚固门极版本。此产品非常适用于电源管理应用。

  • This product is general usage and suitable for many different applications.
  • VGS = 10V，ID = 9.6A时，最大RDS(on) = 14mΩ
  • VGS = 4.5V，ID = 8.7A时，最大rDS(on) = 17 mΩ
  • 薄型 - 最大1mm，采用Power 33封装
  • 符合RoHS标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDMC8878

联系销售

Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

30

14

20

3

16.5

31

-

17

-

18

1000

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMC8878

Equivalent to wafer fab process: T5

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1870813094

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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