Low/Medium Voltage MOSFETs | FDME905PT

P 沟道，PowerTrench® MOSFET，-12V，-8A，22mΩ

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概览

此器件专门针对手机和其他超便携应用中的电池充电或负载开关而设计。它具有一个带有低导通电阻的 MOSFET。MicroFET 1.6x1.6 薄封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • 手机

  • 最大rDS(on) = 22 mΩ （VGS = -4.5 V, ID = -8 A
    ）
  • 最大rDS(on) = 26 mΩ （VGS = -2.5 V, ID = -7.3 A
    ）
  • 最大rDS(on) = 97 mΩ （VGS = -1.8 V, ID = -3.8 A
    ）
  • 薄型： 0.55 mm最大值，新的MicroFET 1.6x1.6薄型封装
  • 不含有卤化合物和氧化锑
  • 符合RoHS标准

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDME905PT

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CAD Model

Pb

A

H

P

UDFN-6

517DV

1

260

REEL

5000

Y

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

-12

-

8

-1

-8

2.1

26

22

5.5

14

1740

-

-

-

-

$0.1881

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可靠性数据

Die Related Summary Data

Device: FDME905PT

Equivalent to wafer fab process: RT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RT

0

153640249

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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