Low/Medium Voltage MOSFETs | FDMQ86530L

N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，60V，8A，17.5mΩ

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概览

与二极管桥相比，此四 MOSFET 解决方案在功率耗散方面提供了十倍改善。

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  • Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A
  • Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
  • Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A
  • Substantial efficiency benefit in PD solutions
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDMQ86530L

联系销售

量产中

CAD Model

Pb

A

H

P

WDFN-12

511CR

1

260

REEL

3000

Yes

N-Channel

PowerTrench® T6

WDFN-12

Low-Medium Voltage

Logic

0

Bridge

0

100

17.5

±20

3

8

22

-

25

-

11

1725

2.3

12

299

10

$1.3906

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可靠性数据

Die Related Summary Data

Device: FDMQ86530L

Equivalent to wafer fab process: T9

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

4725201363

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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