Low/Medium Voltage MOSFETs | FDMS9620S

双 N 沟道，PowerTrench® MOSFET，30V

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概览

此器件在一个独特的双 Power 56 封装内包括了两个专用 MOSFET。它提供了能效和 PCB 利用率方面优化的同步降压功率级。该低开关损耗高压侧 MOSFET 由低导通损耗低压侧 SyncFET™ 提供互补。

  • This product is general usage and suitable for many different applications.
  • Synchronous Buck converter for Notebook System Power
  • Synchronous Buck converter for General Purpose Point of Load
  • Q1: N 沟道
  • 最大 RDS(on) = 29.5mΩ（VGS = 4.5V，ID = 6.5A
    ）Q2: N 沟道
  • 低 Qg高侧 MOSFET
  • 低 RDS(on)低侧 MOSFET
  • 热高效的双 Power 56 封装
  • 为简单 PCB 设计而优化的引脚配置
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDMS9620S

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已停产

CAD Model

Pb

A

H

P

WDFN-8

506DS

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

30

Q1:21.5, Q2: 13.0

20

3

Q1: 16.0, Q2: 18.0

2.5

-

Q1:29.5, Q2: 17.0

-

18

700

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMS9620S

Equivalent to wafer fab process: T3,T5

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T3,T5

0

59884024

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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