Low/Medium Voltage MOSFETs | FDPC8014S

25V 不对称双 N 沟道 PowerTrench® Power Clip MOSFET

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概览

此器件采用一个双封装，其中包含两个特制的 N 沟道 MOSFET。开关节点已经内部连接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET™ (Q2) 可提供最佳功率效率。

  • Computing
  • Communications
  • General Purpose Point of Load

  • Q1： N-沟道
  • 最大值 rDS(on) = 3.8 mΩ（VGS = 10 V, ID = 20 A
    时）
  • 最大值 rDS(on) = 4.7 mΩ（VGS = 4.5 V, ID = 18 A
    时）Q2： N-沟道
  • 最大值 rDS(on) = 1.2 mΩ（VGS = 10 V, ID = 41 A
    时）
  • 最大值 rDS(on) = 1.4 mΩ（VGS = 4.5 V, ID = 37 A
    时）

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDPC8014S

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AR

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Dual

0

25

Q1: 3.8, Q2: 1.2

12

2.5

Q1: 20.0, Q2: 41.0

Q1: 21, Q2: 42

-

Q1: 4.7, Q2: 1.4

-

43

6580

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDPC8014S

Equivalent to wafer fab process: RN

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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