100 V、56 A、21 mΩ、D2PAK
N 沟道 UltraFET®

Obsolete

概览

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

  • 信息娱乐
  • 便携导航
  • 其他
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用

  • 56 A、100 V
  • 峰值电流与脉宽曲线
  • UIS 额定值曲线
  • 相关文献

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

HUFA75639S3ST

Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Standard

0

Single

0

100

25

±20

4

56

200

-

-

-

57

2000

24

320

500

65

Price N/A

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