Low/Medium Voltage MOSFETs | HUFA75645S3S

100 V、75 A、14 mΩ、N 沟道 UltraFET 功率 MOSFET

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N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ

  • AC-DC商用电源
  • 电动自行车
  • 服务器

  • rDS(ON) = 0.014Ω, VGS = 10V
  • 带温度补偿的 PSPICE® 和 SABERTM电气模型
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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

HUFA75645S3S

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Lifetime

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

100

14

±20

4

75

310

-

-

-

106

3790

41

360

810

230

$2.3495

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可靠性数据

Die Related Summary Data

Device: HUFA75645S3S

Equivalent to wafer fab process: U2

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

U2

0

3282858009

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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