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NTMFD1D1N02X adopts the latest Power MOSFET technology for high switching frequency DC/DC conversion application. Higher efficiency and good thermal performance can be achieved by using 5x6 power clip dual package with less package parasitic inductance and less thermal resistance for compact design.
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NTMFD1D1N02X
Active
Pb
A
H
P
PQFN-8
1
260
REEL
3000
F
N-Channel
PowerTrench® T10
Power 56 (SO-8FL)
Low-Medium Voltage
Logic
0
Dual
0
25
3
16
2.1
75
27
~NA~
1.1
6.8
15
1060
1.4
6.6
322
47
$1.1492
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