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The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less ouput capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NTMFS0D5N04XLT1G
Active
Pb
A
H
P
DFN5 5.00x5.90x1.00, 1.27P
1
260
REEL
1500
F
N-Channel
PowerTrench® T10
Power 56 (SO-8FL)
Low-Medium Voltage
Logic
0
Single
0
40
0.49
20
2.2
455
194
~NA~
0.78
57
127
9444
9
108
2468
38
$1.3333
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