Low/Medium Voltage MOSFETs | NTTFSSH1D3N04XL
概览
The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.
This product is an improved 3x3 source-down GEN2 package product, this has better thermal performance than previous 3x3 source down package with high thermal conductivity mold compound to achieve TC-55°C to +150°C
- High Switching Frequency DC−DC Conversion
- Synchronous Rectifier
- Cloud system
- Datacenter / IBC
- Power Supply Unit
- Ultra Low Rds(on) to Improve System Efficiency
- Low Qg and Capacitance to Minimize Driving and Switching Losses
- Excellent Thermal Conduction by Advanced Source−Down Center Gate Package Technology (3.3x3.3mm)
- Board level reliability (BLRT testing): 1000cycle with -40℃ to 125℃, 10min. dwell, 20℃/min, 6layers 2.35T
- These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant
产品参数及购买信息
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
Show More
1-25 of 25
Products per page
Jump to :
1
支持服务
联系安森美销售团队获得支持，查询或者对比产品细节。
联系销售
