Low/Medium Voltage MOSFETs | NTTFSSH1D3N04XL

MOSFET - Power, Single, N-Channel, Source Down 33, WDFN9, 40V, 1.3mΩ, 207A

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  The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.

  This product is an improved 3x3 source-down GEN2 package product, this has better thermal performance than previous 3x3 source down package with high thermal conductivity mold compound to achieve TC-55°C to +150°C

  • High Switching Frequency DC−DC Conversion
  • Synchronous Rectifier

  • Cloud system
  • Datacenter / IBC
  • Power Supply Unit

  • Ultra Low Rds(on) to Improve System Efficiency
  • Low Qg and Capacitance to Minimize Driving and Switching Losses
  • Excellent Thermal Conduction by Advanced Source−Down Center Gate Package Technology (3.3x3.3mm)
  • Board level reliability (BLRT testing): 1000cycle with -40℃ to 125℃, 10min. dwell, 20℃/min, 6layers 2.35T
  • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant

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Case Outline

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MSL Temp (°C)

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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NTTFSSH1D3N04XL

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CAD Model

Pb

A

H

P

WDFN9 3.3x3.3, 0.65P

511EB

1

260

REEL

3000

F

N-Channel

PowerTrench® T10

Power 33 Source Down

Low-Medium Voltage

Logic

0

Single

0

40

1.3

20

2.2

207

107

~NA~

1.7

21

47

3480

~NA~

84

920

32

$0.8666

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