Power MOSFET, N-Channel, 80 V, 1.75 mΩ, Bare Die

量产中

概览

NVCR4LS1D7N08M7A is a 80 V 1.75 mΩ Automotive Power MOSFET Bare die with a die size of 5.080 mm x 3.683 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

  • Switching Power Supplies
  • Power switches (High side driver, Low side driver, H-Bridges, etc)
  • 48 V Systems
  • Motor Control
  • DC/DC Converter
  • Load Switch
  • Low RDS(on)
  • Low QG and Capacitance
  • AEC−Q101 Qualified and PPAP Capable

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

NVCR4LS1D7N08M7A

量产中

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

No

N-Channel

PowerTrench® T6

Bare Die

Low-Medium Voltage

Standard

0

Single

0

80

1.75

20

4

295

357

~NA~

~NA~

~NA~

130

10000

24

118

1540

70

$1.4548

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