NVCR4LS2D8N08M7A is a 80 V 2.8 mΩ Automotive Power MOSFET Bare die with a die size of 4.953 mm x 2.413 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
参考价格
NVCR4LS2D8N08M7A
量产中
Pb
A
H
P
-
-
NA
0
MTFRM
1
No
N-Channel
PowerTrench® T6
Bare Die
Low-Medium Voltage
Standard
0
Single
0
80
2.8
20
4
221
300
~NA~
~NA~
~NA~
86
6320
18
95
1030
32
$0.9488
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