Low/Medium Voltage MOSFETs | NVD3055-150

功率 MOSFET，60V，9A，150mΩ，单 N 沟道，DPAK

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适用于电源、转换器、功率电机控制和桥式电路中的低压高速开关应用的汽车级功率 MOSFET。通过 AEC-Q101 认证的 MOSFET，符合生产件批准程序 (PPAP)，适用于汽车应用。

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVD3055-150T4G

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

60

150

20

4

9

28.8

-

-

-

7.1

200

-

36

70

26

Price N/A

More Details

NVD3055-150T4G-VF01

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Active

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

60

150

20

4

9

28.8

-

-

-

7.1

200

-

36

70

26

$0.3682

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可靠性数据

Die Related Summary Data

Device: NVD3055-150T4G

Equivalent to wafer fab process: TMOS 7

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TMOS 7

0

1220062755

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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