双 N 沟道,逻辑电平,功率 MOSFET,40V,34A,10mΩ
Last Shipments
适用于紧凑和高效设计的汽车用功率 MOSFET,采用 5x6mm 扁平引线封装,具有较高的热性能。可用于增强光学检测的可润湿侧翼选项。通过 AEC-Q101 认证 MOSFET 且符合生产件批准程序 (PPAP),适用于汽车应用。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
参考价格
Last Shipments
Pb
A
H
P
SO-8FL Dual / DFN-8
1
260
REEL
1500
No
N-Channel
PowerTrench® T1
Power 56 (SO-8FL)
Low-Medium Voltage
Logic
0
Dual
0
40
10
20
2.4
34
24
-
15
12.8
23
1100
7
12.1
152
110
Price N/A
More Details
Last Shipments
Pb
A
H
P
SO-8FL Dual / DFN-8
1
260
REEL
1500
No
N-Channel
PowerTrench® T1
Power 56 (SO-8FL)
Low-Medium Voltage
Logic
0
Dual
0
40
10
20
2.4
34
24
-
15
12.8
23
1100
7
12.1
152
110
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: NVMFD5853NLT1G
Equivalent to wafer fab process: TRENCH FET LEGACY
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TRENCH FET LEGACY
5
25938380737
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)