Low/Medium Voltage MOSFETs | NVMYS021N10MCL

MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A

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MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A

  • OBD/DC-DC conversion
  • Motor control
  • MHEV / HEV/EV
  • Small foot print - 5mm x 6mm
  • Low Rdson
  • Low Qg
  • AEC-Q101 Qualified

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

NVMYS021N10MCLTWG

联系销售

量产中

CAD Model

Pb

A

H

P

LFPAK-4

760AB

1

260

REEL

3000

Yes

N-Channel

PowerTrench® T8

Power 56 LFPAK

Low-Medium Voltage

Logic

0

Single

0

100

23

20

3

31

49

~NA~

33

6

13

850

1.7

18

310

5

$0.8153

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可靠性数据

Die Related Summary Data

Device: NVMYS021N10MCLTWG

Equivalent to wafer fab process: HVFET

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HVFET

21

49137887952

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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