方案
By Technology
N 沟道逻辑电平功率 MOSFET 60V,11A,107mΩ
Last Shipments
此类 N 沟道增强型功率 MOSFET 使用最新的制造工艺技术生产。此工艺使用的特征尺寸接近 LSI 电路的特征尺寸,可实现硅的最佳利用,从而实现出色的性能。此类器件适用于开关稳压器、开关转换器、电机驱动器和继电器驱动器等应用。这些晶体管可以直接在集成电路中运行。以前的开发类型为TA49158。
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Last Shipments
Pb
A
H
P
IPAK-3 / DPAK-3 STRAIGHT LEAD
NA
0
TUBE
1800
N
N-Channel
PowerTrench® T1
DPAK
Low-Medium Voltage
Logic
0
Single
0
60
-
±16
3
11
38
-
107
-
5.2
350
-
-
105
23
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
可靠性数据
Die Related Summary Data
Device: RFD3055LE
Equivalent to wafer fab process: U2
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
U2
0
3282858009
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)