功率 MOSFET,-100V,275mΩ,-11A,单 P 沟道

Obsolete

概览

此功率 MOSFET 使用安森美半导体的沟槽技术生产,这是专为最大程度减小门极电荷、实现超低导通电阻而设计的技术。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。

  • Reverse Battery Protection
  • Load Switch

  • Low On-Resistance
  • 4V drive
  • 100% Avalanche Tested
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SFT1345-TL-H

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

700

N

P-Channel

PowerTrench® T1

DPAK-4

Low-Medium Voltage

Logic

0

Single

0

-100

275

20

-2.6

-11

35

-

315

-

21

1020

3.6

-

72

43

Price N/A

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