MVGSF1N03L

单 N 沟道，功率 MOSFET，30V，2.1A，100mΩ

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CAD模型

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汽车用功率 MOSFET，30V，2.1A，100mΩ，单 N 沟道，SOT-23。此类小型表面贴装 MOSFET 的 RDS(on) 可确保最小的功率损耗和节能，使得此类器件适用于空间敏感型电源管理电路。

应用

Power Management

特性

AEC Qualified
PPAP Capable
Miniature SOT-23 Surface Mount Package
Low r_DS(on) Provides Higher Efficiency
and Extends Battery Life
Pb-Free Packages are Available

物质成分

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

MVGSF1N03LT1G

Active

SOT-23 (TO-236)

318

260

REEL

3000

100

N-Channel

Single

2.4

1.6

0.42

145

3.5

140

$0.3227

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MOSFETs | MVGSF1N03L

单 N 沟道，功率 MOSFET，30V，2.1A，100mΩ

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