MOSFETs | NDB5060L

N 沟道逻辑电平增强型场效应晶体管 60V，26A，35mΩ

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概览

此类 N 沟道逻辑电平增强型电场效应晶体管使用安森美半导体的高单元密度 DMOS 专属工艺生产。此极高密度工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如汽车、DC/DC 转换器、PWM 电机控制和其他电池供电电路。

  • This product is general usage and suitable for many different applications.
  • 26 A，60 V。 RDS(ON) = 0.05Ω @ VGS= 5 V，RDS(ON) = 0.035Ω @ VGS= 10 V。
  • 在高温下额定的临界DC电气参数。
  • 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。
  • 175°C最大结温额定值。
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • TO-220和TO-263 (D2PAK)封装，适用于通孔和表面贴装应用。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDB5060L

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

60

35

N-Channel

Single

16

2

26

68

-

50

26

17

840

$1.222

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