MOSFETs | NDC7001C

双 N 和 P 沟道增强型场效应晶体管，60V

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CAD Model

CAD模型

概览

此类双 N 和 P 沟道增强型场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。这种极高密度工艺可最大程度地降低导通电阻，提供了坚固可靠的性能和快速的开关。此类器件尤其适用于低电压、低电流、开关和电源应用。

  • This product is general usage and suitable for many different applications.
  • Q1： 0.51A，60V
  • Q2： -0.34A，60V
  • 高饱和电流
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • 专有SuperSOTTM-6封装设计采用铜引脚架构，以获得出色的热性能和电气性能

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDC7001C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

±60

N: 2000, P: 5000

Complementary

Dual

±20

2.5

-0.34

0.096

-

N: 4000, P: 7500

-

1.6

20

$0.1383

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