NDC7003P

双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω

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CAD模型

概览

此类双 P 沟道增强型场效应晶体管是使用安森美半导体的专属沟槽技术生产的。这种极高密度工艺可最大程度地降低导通电阻，提供了坚固可靠的性能和快速的开关。此产品尤其适用于需要低电流高压侧开关的低压应用。

应用

This product is general usage and suitable for many different applications.

特性

0.34 A，50 V。
R_DS(ON) = 5 Ω @ V_GS = -10 V
R_DS(ON) = 7 Ω @ V_GS = -4.7 V
低栅极电荷
快速开关速度
高性能沟道技术可实现极低的R_DS(ON)
SuperSOT™ -6封装：小尺寸（比标准SO-8小72%）；薄型（1mm厚）。

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDC7003P

Active

TSOT-23-6

419BL

260

REEL

3000

-60

Q1=Q2=5000

P-Channel

Dual

±20

-3.5

-0.34

0.96

Q1=Q2=7000

1.6

$0.1573

产品型号:

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MOSFETs | NDC7003P

双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω

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