MOSFETs | NDP6060

N 沟道增强型场效应晶体管 60V，48A，25mΩ

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概览

此类 N 沟道增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属工艺生产的。此极高密度工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如汽车、DC/DC 转换器、PWM 电机控制和其他电池供电电路。

  • This product is general usage and suitable for many different applications.
  • 48A，60V。 RDS(ON) = 0.025Ω@ VGS=10V。
  • 在高温下额定的临界DC电气参数。
  • 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。
  • 175°C最大结温额定值。
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • TO-220和TO-263 (D2PAK)封装，适用于通孔和表面贴装应用。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDP6060

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

60

25

N-Channel

Single

±20

4

48

100

-

-

-

39

1190

$1.3705

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