MOSFETs | NDS0610

P 沟道增强型场效应晶体管，-60V，-0.12A，10Ω

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概览

此 P 沟道增强型场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。这种极高密度工艺可最大程度地降低导通电阻，提供了坚固可靠的性能和快速的开关。NDS0610 可用于最高要求 120mA DC 的大多数应用，可以提供高达 1 A 的电流，且工作量极小。此产品尤其适用于需要低电流高压侧开关的低压应用。

  • This product is general usage and suitable for many different applications.
  • -0.12 A, -60 V. RDS(ON) = 10 Ω @ VGS = -10 V RDS(ON) = 20 Ω @ VGS = -4.5 V
  • 电压控制P沟道小信号开关
  • 高密度设计可实现低RDS(ON)
  • 高饱和电流

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS0610

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

-60

10000

P-Channel

Single

±20

-3.5

-0.12

40

-

20000

11

1.8

79

$0.0833

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